[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-A22-10] Proposal of atmospheric pressure activation process for Mg-ion implanted GaN using OVPE method

〇Shigeyoshi Usami¹, Yuta Ito², Miyuki Kagawa¹, Sogo Yokoi¹, Atsushi Tanaka³, Junichi Takino⁴, Tomoaki Sumi⁴, Masayuki Imanishi¹, Ryota Ito⁵, Masahiko Hata⁶, Masashi Yoshimura⁷, Yoshio Okayama⁴, Yoshio Honda³, Hiroshi Amano³, Yusuke Mori¹ (1.Osaka Univ., 2.Nagoya Univ., 3.IMaSS Nagoya Univ., 4.Panasonic Holdings Corp., 5.Sumitomo Chemical Co., Ltd., 6.Itochu Plastics Inc., 7.ILE Osaka Univ.)

Keywords:

OVPE method,GaN,Mg-ion implantation