Session Details
[16p-A22-1~22]CS.13 Code-sharing Session of 13.7 & 15.4
Mon. Sep 16, 2024 1:00 PM - 7:00 PM JST
Mon. Sep 16, 2024 4:00 AM - 10:00 AM UTC
Mon. Sep 16, 2024 4:00 AM - 10:00 AM UTC
A22 (TOKI MESSE 2F)
Taketomo Sato(Hokkaido Univ.), Tomoyuki Tanikawa(Osaka Univ.), Junji Kotani(Sumitomo Electric Industries)
[16p-A22-1]Effect of UVA light on GaN nanowire fabrication using contactless PEC etching
〇Hisahiro Furuuchi1,2, Junichi Motohisa1,2, Taketomo Sato2 (1.Hokkaido Univ., 2.RCIQE)
[16p-A22-2]The effect of the coverplate during dry etching on N-polar GaN
〇Hidejiro Mishima1, Daiki Nakamura1, Satoko Shinkai1 (1.Kyushu Inst.)
[16p-A22-3]Improvement of MOVPE growth for N-polar GaN coherent growth on AlN
〇(M2)Itsuki Furuhashi1, Markus Pristovsek2, Xu Yang2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
[16p-A22-4]Effect of leakage currents on breakdown voltage in N-polar GaN/AlGaN/GaN High Electron Mobility Transistor
〇(M2)Aina Hiyama Zazuli1, Kai Fujii1, Ryosuke Ninoki1, Nobuteru Hirata1, Taisei Kimoto1, Satoshi Kurai1, Narihito Okada1, Atsushi Tanaka2, Shugo Nitta2, Yoshio Honda2, Hiroshi Amano2, Yoichi Yamada1 (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.Nagoya Univ. IMaSS)
[16p-A22-5]Ohmic contact formation on N-polar n-GaN surfaces exposed by wafer bonding and back surface process
〇(M1)Satoki Toka1, Jianbo Liang1, Tetsuya Suemitsu2, Naoteru Shigekawa1 (1.Osaka Metropolitan Univ., 2.Tohoku Univ.)
[16p-A22-6]Development of high-power-density N-polar GaN/InAlN HEMT
〇Akihiro Hayasaka1, Shigeki Yoshida1, Akira Mukai1, Isao Makabe1, Yukihiro Tsuji1, Kozo Makiyama1, Ken Nakata1 (1.Sumitomo Electric)
[16p-A22-7]Fabrication and electrical properties of GaN vertical junction barrier Schottky diode using N/Mg ion-implantation
〇Woong Kwon1, Yuta Itoh1, Atsushi Tanaka2, Hirotaka Watanabe2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Dcenter Nagoya Univ., 4.IAR Nagoya Univ.)
[16p-A22-8][The 56th Young Scientist Presentation Award Speech] Reduction of Compensating Donor Concentration of Implanted and Diffusion Regions by Sequential N-ion Implantation in Mg-implanted p-GaN
〇Kensuke Sumida1, Keita Kataoka2, Tetsuo Narita2, Masahiro Horita1,3, Tetsu Kachi1,3, Jun Suda1,3 (1.Nagoya Univ., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS)
[16p-A22-9][The 56th Young Scientist Presentation Award Speech] Current-voltage characteristics of GaN vertical JBS diodes fabricated by channeled implantation of Mg ions and ultra-high-pressure annealing
〇Kazuki Kitagawa1, Maciej Matys2, Tsutomu Uesugi2, Masahiro Horita1,2, Testu Kachi2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
[16p-A22-10]Proposal of atmospheric pressure activation process for Mg-ion implanted GaN using OVPE method
〇Shigeyoshi Usami1, Yuta Ito2, Miyuki Kagawa1, Sogo Yokoi1, Atsushi Tanaka3, Junichi Takino4, Tomoaki Sumi4, Masayuki Imanishi1, Ryota Ito5, Masahiko Hata6, Masashi Yoshimura7, Yoshio Okayama4, Yoshio Honda3, Hiroshi Amano3, Yusuke Mori1 (1.Osaka Univ., 2.Nagoya Univ., 3.IMaSS Nagoya Univ., 4.Panasonic Holdings Corp., 5.Sumitomo Chemical Co., Ltd., 6.Itochu Plastics Inc., 7.ILE Osaka Univ.)
[16p-A22-11]Investigation of Charge Generated at Surface of p-type GaN
〇Yining Jiao1, Masanobu Takahashi1, Kyouta Shimazaki1, Taketomo Sato1, Masamichi Akazawa1 (1.RCIQE, Hokkaido Univ)
[16p-A22-12][The 56th Young Scientist Presentation Award Speech] Fabrication of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping
〇Takeru Kumabe1, Akira Yoshikawa2,3, Seiya Kawasaki1, Maki Kushimoto1, Yoshio Honda3,4,5, Manabu Arai3, Jun Suda1,3, Hiroshi Amano3,4,5 (1.Grad. Sch. Eng. Nagoya Univ., 2.Asahi Kasei, 3.IMaSS Nagoya Univ., 4.D-Center Nagoya Univ., 5.IAR Nagoya Univ.)
[16p-A22-13]Analysis of Forward Current Component in Si-doped AlN Schottky Barrier Diodes
〇Issei Sasaki1, Masanobu Hiroki2, Kazuhide Kumakura2, Kazuyuki Hirama2, Yoshitaka Taniyasu2, Yoshiaki Nakano1, Takuya Maeda1 (1.UTokyo, 2.NTT-BRL)
[16p-A22-14]Characterization of high-temperature properties of AlN MESFETs
〇Masanobu Hiroki1, Kazuyuki Hirama1, Kazuhide Kumakura1, Yoshitaka Taniyasu1 (1.NTT BRL)
[16p-A22-15]Fabrication and characterization of Al-rich AlGaN multichannel Fin-structure
〇Takao Kozaka1, Kohei Ueno1, Hiroshi Fujioka1 (1.IIS)
[16p-A22-16]Demonstration of Pseudomorphic AlN/GaN HEMT Operation on AlN Substrate Using MOVPE Method
〇Taegi Lee1, Akira Yoshikawa1,3, Takeru Kumabe2, Sho Sugiyama1, Manabu Arai3, Jun Suda2,3, Hiroshi Amano2,3 (1.Asahi Kasei Corp., 2.Nagoya Univ., 3.IMaSS)
[16p-A22-17]Electrical Characteristics of a High AlN Mole Fraction AlGaN/GaN Dual-Gate HEMT
〇Yuji Ando1,2, Hidemasa Takahashi1, Ryutaro Makisako1, Akio Wakejima3, Suda Jun1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Kumamoto Univ.)
[16p-A22-18]Confirmation of avalanche brakdown in a vertical PND structure with GaN/AlGaN/GaN double heterostructure
〇Eito Kokubo1, Hirotaka Watanabe2, Manato Deki3, Atsushi Tanaka2, Shugo Nitta2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.D center Nagoya Univ., 4.IAR Nagoya Univ.)
[16p-A22-19]Correlation between the carrier transport and defect distribution of AlGaN/GaN heterostructure
〇Masatomo Sumiya1, Yasutaka Imanaka1, Yoshitaka Nakano2, Kanji Takehana1 (1.NIMS, 2.Chubu Univ.)
[16p-A22-20]Temperature Dependence of Drift Velocity of 2DEG in AlGaN/GaN Heterostructure
〇Yusuke Wakamoto1, Takahiko Kawahara2, Shigeki Yoshida2, Kozo Makiyama2, Ken Nakata2, Takuya Maeda1 (1.UTokyo, 2.Sumitomo Electric Industries, Ltd)
[16p-A22-21]Effects of Sc composition and lattice constraint on polarization switching of ScAlN alloys
〇Toru Akiyama1, Takuto Miyamoto1, Takahiro Kawamura1 (1.Mie Univ.)
[16p-A22-22]Epitaxial growth of ScAlN/AlGaN/GaN heterostructures
〇Tomoya Okuda1, Syunsuke Ota2, Takahiko Kawahara3, Kozo Makiyama3, Ken Nakata3, Takuya Maeda4, Atsushi Kobayashi1,2 (1.Grad. School, Tokyo Univ. of Science, 2.Tokyo Univ. of Science, 3.Sumitomo Electric Industries, 4.The Univ. of Tokyo)