[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4 | The 85th JSAP Autumn Meeting 2024

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Oral presentationCS Code-sharing session : 【CS.13】Code-sharing Session of 13.7 & 15.4

[16p-A22-1~22]CS.13 Code-sharing Session of 13.7 & 15.4

Mon. Sep 16, 2024 1:00 PM - 7:00 PM JST
Mon. Sep 16, 2024 4:00 AM - 10:00 AM UTC

A22 (TOKI MESSE 2F)

Taketomo Sato(Hokkaido Univ.), Tomoyuki Tanikawa(Osaka Univ.), Junji Kotani(Sumitomo Electric Industries)

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[16p-A22-1]Effect of UVA light on GaN nanowire fabrication using contactless PEC etching

〇Hisahiro Furuuchi^1,2, Junichi Motohisa^1,2, Taketomo Sato² (1.Hokkaido Univ., 2.RCIQE)

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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[16p-A22-2]The effect of the coverplate during dry etching on N-polar GaN

〇Hidejiro Mishima¹, Daiki Nakamura¹, Satoko Shinkai¹ (1.Kyushu Inst.)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[16p-A22-3]Improvement of MOVPE growth for N-polar GaN coherent growth on AlN

〇(M2)Itsuki Furuhashi¹, Markus Pristovsek², Xu Yang² (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-4]Effect of leakage currents on breakdown voltage in N-polar GaN/AlGaN/GaN High Electron Mobility Transistor

〇(M2)Aina Hiyama Zazuli¹, Kai Fujii¹, Ryosuke Ninoki¹, Nobuteru Hirata¹, Taisei Kimoto¹, Satoshi Kurai¹, Narihito Okada¹, Atsushi Tanaka², Shugo Nitta², Yoshio Honda², Hiroshi Amano², Yoichi Yamada¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.Nagoya Univ. IMaSS)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-5]Ohmic contact formation on N-polar n-GaN surfaces exposed by wafer bonding and back surface process

〇(M1)Satoki Toka¹, Jianbo Liang¹, Tetsuya Suemitsu², Naoteru Shigekawa¹ (1.Osaka Metropolitan Univ., 2.Tohoku Univ.)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-6]Development of high-power-density N-polar GaN/InAlN HEMT

〇Akihiro Hayasaka¹, Shigeki Yoshida¹, Akira Mukai¹, Isao Makabe¹, Yukihiro Tsuji¹, Kozo Makiyama¹, Ken Nakata¹ (1.Sumitomo Electric)

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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-7]Fabrication and electrical properties of GaN vertical junction barrier Schottky diode using N/Mg ion-implantation

〇Woong Kwon¹, Yuta Itoh¹, Atsushi Tanaka², Hirotaka Watanabe², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Dcenter Nagoya Univ., 4.IAR Nagoya Univ.)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-A22-8][The 56th Young Scientist Presentation Award Speech] Reduction of Compensating Donor Concentration of Implanted and Diffusion Regions by Sequential N-ion Implantation in Mg-implanted p-GaN

〇Kensuke Sumida¹, Keita Kataoka², Tetsuo Narita², Masahiro Horita^1,3, Tetsu Kachi^1,3, Jun Suda^1,3 (1.Nagoya Univ., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[16p-A22-9][The 56th Young Scientist Presentation Award Speech] Current-voltage characteristics of GaN vertical JBS diodes fabricated by channeled implantation of Mg ions and ultra-high-pressure annealing

〇Kazuki Kitagawa¹, Maciej Matys², Tsutomu Uesugi², Masahiro Horita^1,2, Testu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-A22-10]Proposal of atmospheric pressure activation process for Mg-ion implanted GaN using OVPE method

〇Shigeyoshi Usami¹, Yuta Ito², Miyuki Kagawa¹, Sogo Yokoi¹, Atsushi Tanaka³, Junichi Takino⁴, Tomoaki Sumi⁴, Masayuki Imanishi¹, Ryota Ito⁵, Masahiko Hata⁶, Masashi Yoshimura⁷, Yoshio Okayama⁴, Yoshio Honda³, Hiroshi Amano³, Yusuke Mori¹ (1.Osaka Univ., 2.Nagoya Univ., 3.IMaSS Nagoya Univ., 4.Panasonic Holdings Corp., 5.Sumitomo Chemical Co., Ltd., 6.Itochu Plastics Inc., 7.ILE Osaka Univ.)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-11]Investigation of Charge Generated at Surface of p-type GaN

〇Yining Jiao¹, Masanobu Takahashi¹, Kyouta Shimazaki¹, Taketomo Sato¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ)

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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[16p-A22-12][The 56th Young Scientist Presentation Award Speech] Fabrication of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping

〇Takeru Kumabe¹, Akira Yoshikawa^2,3, Seiya Kawasaki¹, Maki Kushimoto¹, Yoshio Honda^3,4,5, Manabu Arai³, Jun Suda^1,3, Hiroshi Amano^3,4,5 (1.Grad. Sch. Eng. Nagoya Univ., 2.Asahi Kasei, 3.IMaSS Nagoya Univ., 4.D-Center Nagoya Univ., 5.IAR Nagoya Univ.)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-13]Analysis of Forward Current Component in Si-doped AlN Schottky Barrier Diodes

〇Issei Sasaki¹, Masanobu Hiroki², Kazuhide Kumakura², Kazuyuki Hirama², Yoshitaka Taniyasu², Yoshiaki Nakano¹, Takuya Maeda¹ (1.UTokyo, 2.NTT-BRL)

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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[16p-A22-14]Characterization of high-temperature properties of AlN MESFETs

〇Masanobu Hiroki¹, Kazuyuki Hirama¹, Kazuhide Kumakura¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[16p-A22-15]Fabrication and characterization of Al-rich AlGaN multichannel Fin-structure

〇Takao Kozaka¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS)

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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-16]Demonstration of Pseudomorphic AlN/GaN HEMT Operation on AlN Substrate Using MOVPE Method

〇Taegi Lee¹, Akira Yoshikawa^1,3, Takeru Kumabe², Sho Sugiyama¹, Manabu Arai³, Jun Suda^2,3, Hiroshi Amano^2,3 (1.Asahi Kasei Corp., 2.Nagoya Univ., 3.IMaSS)

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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[16p-A22-17]Electrical Characteristics of a High AlN Mole Fraction AlGaN/GaN Dual-Gate HEMT

〇Yuji Ando^1,2, Hidemasa Takahashi¹, Ryutaro Makisako¹, Akio Wakejima³, Suda Jun^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Kumamoto Univ.)

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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-18]Confirmation of avalanche brakdown in a vertical PND structure with GaN/AlGaN/GaN double heterostructure

〇Eito Kokubo¹, Hirotaka Watanabe², Manato Deki³, Atsushi Tanaka², Shugo Nitta², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.D center Nagoya Univ., 4.IAR Nagoya Univ.)

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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[16p-A22-19]Correlation between the carrier transport and defect distribution of AlGaN/GaN heterostructure

〇Masatomo Sumiya¹, Yasutaka Imanaka¹, Yoshitaka Nakano², Kanji Takehana¹ (1.NIMS, 2.Chubu Univ.)

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6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-20]Temperature Dependence of Drift Velocity of 2DEG in AlGaN/GaN Heterostructure

〇Yusuke Wakamoto¹, Takahiko Kawahara², Shigeki Yoshida², Kozo Makiyama², Ken Nakata², Takuya Maeda¹ (1.UTokyo, 2.Sumitomo Electric Industries, Ltd)

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6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[16p-A22-21]Effects of Sc composition and lattice constraint on polarization switching of ScAlN alloys

〇Toru Akiyama¹, Takuto Miyamoto¹, Takahiro Kawamura¹ (1.Mie Univ.)

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6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[16p-A22-22]Epitaxial growth of ScAlN/AlGaN/GaN heterostructures

〇Tomoya Okuda¹, Syunsuke Ota², Takahiko Kawahara³, Kozo Makiyama³, Ken Nakata³, Takuya Maeda⁴, Atsushi Kobayashi^1,2 (1.Grad. School, Tokyo Univ. of Science, 2.Tokyo Univ. of Science, 3.Sumitomo Electric Industries, 4.The Univ. of Tokyo)

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