[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[16p-A22-12] [The 56th Young Scientist Presentation Award Speech] Fabrication of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping

〇Takeru Kumabe¹, Akira Yoshikawa^2,3, Seiya Kawasaki¹, Maki Kushimoto¹, Yoshio Honda^3,4,5, Manabu Arai³, Jun Suda^1,3, Hiroshi Amano^3,4,5 (1.Grad. Sch. Eng. Nagoya Univ., 2.Asahi Kasei, 3.IMaSS Nagoya Univ., 4.D-Center Nagoya Univ., 5.IAR Nagoya Univ.)

Keywords:

Aluminum nitride,Polarization doping,Power semiconductor devices

AlN and high-Al-content AlGaN attract great attention as materials for next-generation electronic device applications. Although the p-n junction is a fundamental building block of semiconductor devices, no AlN-based p-n diodes exhibited ideal electrical properties due to the difficulty in controlling conductivity by conventional impurity doping. In this study, we report on demonstrating near-ideal AlN-based p-n diodes. The polarization effects in nitride semiconductors are engineered to control the fixed charges and built-in potential in the p-n junction.