[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-13] Analysis of Forward Current Component in Si-doped AlN Schottky Barrier Diodes

〇Issei Sasaki¹, Masanobu Hiroki², Kazuhide Kumakura², Kazuyuki Hirama², Yoshitaka Taniyasu², Yoshiaki Nakano¹, Takuya Maeda¹ (1.UTokyo, 2.NTT-BRL)

Keywords:

AlN,SBD,barrier height

AlN has attracted attention as a power device material that can operate at high temperatures and high voltages. In this study, we have investigated the current transport mechanism in AlN SBDs in detail and succeeded in clarifying the barrier height and its variation. We also found that the density of defects that produce this barrier height variation is much smaller than the dislocation density, suggesting that while dislocations are the main cause of leakage current in other materials such as Si and GaN, other factors may be involved in AlN.