[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[16p-A22-14] Characterization of high-temperature properties of AlN MESFETs

〇Masanobu Hiroki¹, Kazuyuki Hirama¹, Kazuhide Kumakura¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

Keywords:

AlN,MESFET

We characterized properites of AlN MESFETs at temperatures from RT to 1000°C. The device operation at 1000°C was found with drain current of 30 mA/mm and on-off ratio of 10². At high temperatures, gate leakage current is about 1/10 of off-state leakage current, indicating leakage current in AlN buffer layer is dominant.
Next, we investigated the heat resistance of AlN MESFETs. The heating to 1000ºC irreversibly changed the device characteristics. The gate leakage current at RT after heating is larger than that before heating, suggesting the deterioration of Schottky properties of Ni gate electrode at high temperatures.