[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[16p-A22-17] Electrical Characteristics of a High AlN Mole Fraction AlGaN/GaN Dual-Gate HEMT

〇Yuji Ando^1,2, Hidemasa Takahashi¹, Ryutaro Makisako¹, Akio Wakejima³, Suda Jun^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Kumamoto Univ.)

Keywords:

AlGaN/GaN,HEMT,dual-gate

We have developed a dual-gate structure as a breakthrough technology to enable sub-THz applications of GaN HEMTs. In this paper, we study the increase in the AlN mole fraction of the AlGaN barrier layer to further improve the gain characteristics of AlGaN/GaN dual-gate HEMTs.