[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[16p-A22-2] The effect of the coverplate during dry etching on N-polar GaN

〇Hidejiro Mishima¹, Daiki Nakamura¹, Satoko Shinkai¹ (1.Kyushu Inst.)

Keywords:

GaN,Dry etching,N-polar