[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-4] Effect of leakage currents on breakdown voltage in N-polar GaN/AlGaN/GaN High Electron Mobility Transistor

〇(M2)Aina Hiyama Zazuli¹, Kai Fujii¹, Ryosuke Ninoki¹, Nobuteru Hirata¹, Taisei Kimoto¹, Satoshi Kurai¹, Narihito Okada¹, Atsushi Tanaka², Shugo Nitta², Yoshio Honda², Hiroshi Amano², Yoichi Yamada¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ., 2.Nagoya Univ. IMaSS)

Keywords:

N-polar GaN