[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-5] Ohmic contact formation on N-polar n-GaN surfaces exposed by wafer bonding and back surface process

〇(M1)Satoki Toka¹, Jianbo Liang¹, Tetsuya Suemitsu², Naoteru Shigekawa¹ (1.Osaka Metropolitan Univ., 2.Tohoku Univ.)

Keywords:

GaN,Surface activated bonding,N-polar surface

To verify the possibility of fabricating devices on the N-polar surface without crystal growth in the N-polar direction, ohmic electrodes were formed on the N-polar surface of n-GaN layers formed by wafer bonding and backside processes, and the characteristics were evaluated. Although ohmic-like characteristics were obtained on the N-polar face, higher resistance characteristics were observed compared to the Ga-polar face. Therefore, it is considered necessary to investigate the process conditions for device fabrication on the N-polar face using wafer bonding and backside processing.