[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A22-7] Fabrication and electrical properties of GaN vertical junction barrier Schottky diode using N/Mg ion-implantation

〇Woong Kwon¹, Yuta Itoh¹, Atsushi Tanaka², Hirotaka Watanabe², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Dcenter Nagoya Univ., 4.IAR Nagoya Univ.)

Keywords:

Vertical GaN power device,Junction barrier Schottky diode,Selective doping technique

In this study, vertical GaN junction barrier Schottky diodes (JBSDs) were fabricated using N/Mg ion implantation. From I-V characteristics, increased the barrier height and decreased the reverse leakage current were confirmed by narrowing the width of the Schottky region in the JBSDs. I_on(1.2 V)/I_off(-650 V) was 10⁹, indicating that a high on/off was achieved over a wide voltage range. The on-resistance was 1.2-1.4 mΩcm².