[16p-A22-1~22] CS.13 Code-sharing Session of 13.7 & 15.4

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[16p-A22-9] [The 56th Young Scientist Presentation Award Speech] Current-voltage characteristics of GaN vertical JBS diodes fabricated by channeled implantation of Mg ions and ultra-high-pressure annealing

〇Kazuki Kitagawa¹, Maciej Matys², Tsutomu Uesugi², Masahiro Horita^1,2, Testu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

Keywords:

Vertical GaN power devices,Channeled implantation of Mg ions,JBS diodes