[16p-A23-1~6] Single crystal thin films epitaxially grown on silicon substrates and their device applications

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[16p-A23-1] Martensite Epitaxy

〇Takeshi Kijima^1,2, Masashi Seki¹, Isao Kimura¹, Hitoshi Tabata², Kento Nakao¹ (1.Gaianixx Inc., 2.Univ. of Tokyo)

Keywords:

multi-functional interlayer,Martensite Epitaxy,single-crystalline functional film

When various functional films (piezoelectric, alloy, compound semiconductor, etc.) are hetero-epitaxially grown on a Si single crystal substrate, a HfZrO₂ multi-functional interlayer is sandwiched between them as a buffer. Then, the HfZrO₂ multi-functional interlayer undergoes slipping twin martensitic transformation in a direction that cancels out the shear stress caused by the lattice mismatch existing between the Si substrate and the functional film. At the same time, an excellent single-crystalline functional film that inherited the good single-crystallinity of the Si substrate was obtained.