Session Details

[16p-A23-1~6]Single crystal thin films epitaxially grown on silicon substrates and their device applications

Mon. Sep 16, 2024 1:30 PM - 4:45 PM JST
Mon. Sep 16, 2024 4:30 AM - 7:45 AM UTC
A23 (TOKI MESSE 2F)
Masashi Seki(Gaianixx Inc.)

[16p-A23-1]Martensite Epitaxy

〇Takeshi Kijima1,2, Masashi Seki1, Isao Kimura1, Hitoshi Tabata2, Kento Nakao1 (1.Gaianixx Inc., 2.Univ. of Tokyo)
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[16p-A23-2]Formation of Ferroelectric Epitaxial Capacitors on Si by Sputtering Process

〇Takashi Yoshimura1 (1.Osaka Metro. Univ.,)
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[16p-A23-3]Sputtering deposition of epitaxial PZT thin films on Si substrates

〇Isaku kanno1, SangHyo Kweon1, Goon Tan2 (1.Kobe Univ., 2.Osaka Metro Univ.)
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[16p-A23-4]Fabrication and characterization of epitaxial PZT thin films on Si substrates by sol-gel method

〇Goon Tan1, Sang Hyo Kweon2, Isaku Kanno2 (1.Osaka Metro. Univ., 2.Kobe Univ.)
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[16p-A23-5]Epitaxial growth of PMN-PT-based single-crystal thin film with giant piezoelectricity on Si substrate

〇Shinya Yoshida1 (1.Shibaura Inst. Tech.)
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[16p-A23-6]Piezoelectric epitaxial thin films for BAW filter applications

〇Takahiko Yanagitani1,2,3,4 (1.Waseda University, 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST)
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