[16p-A23-1~6] Single crystal thin films epitaxially grown on silicon substrates and their device applications

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[16p-A23-3] Sputtering deposition of epitaxial PZT thin films on Si substrates

〇Isaku kanno¹, SangHyo Kweon¹, Goon Tan² (1.Kobe Univ., 2.Osaka Metro Univ.)

Keywords:

PZT,piezoelectric,thin film

We have investigated epitaxial PZT thin films by sputtering deposition for their piezoelectric MEMS applications. In particular, their characteristic crystal structure differs significantly from that of bulk PZT and polycrystalline PZT thin films, and is expected to be developed for new applications utilising their dielectric, ferroelectric and piezoelectric properties. In addition to the epitaxial PZT thin films with the uniform composition, superlattice thin films with periodic composition modulation in the film thickness direction have been grown on the Si substrates. The crystal structure was significantly different from that of bulk materials due to strong in-plane interlayer stresses, which is expected to lead to the creation of new piezoelectric thin film devices.