[16p-A23-1~6] Single crystal thin films epitaxially grown on silicon substrates and their device applications

3:15 PM - 3:45 PM JST(6:15 AM - 6:45 AM UTC)

[16p-A23-4] Fabrication and characterization of epitaxial PZT thin films on Si substrates by sol-gel method

〇Goon Tan¹, Sang Hyo Kweon², Isaku Kanno² (1.Osaka Metro. Univ., 2.Kobe Univ.)

Keywords:

piezoelectric thin films,sol gel method

Piezoelectric thin film materials such as PZT (lead zirconate titanate) are widely applied as piezoelectric devices in various industrial fields. Considering compatibility, cost, microfabrication, and also piezoelectric performance, it is ideal to grow oriented thin films on Si substrates. In this presentation, we will report on the epitaxial growth of PZT piezoelectric thin films on Si substrates using sol-gel method, which enables film fabrication under atmospheric pressure with a simple deposition apparatus. Additionally, we will evaluate and discuss the crystal structures and piezoelectric properties of the films.