[16p-A23-1~6] Single crystal thin films epitaxially grown on silicon substrates and their device applications

3:45 PM - 4:15 PM JST(6:45 AM - 7:15 AM UTC)

[16p-A23-5] Epitaxial growth of PMN-PT-based single-crystal thin film with giant piezoelectricity on Si substrate

〇Shinya Yoshida¹ (1.Shibaura Inst. Tech.)

Keywords:

Piezoelectric MEMS actuator,PMN-PT,Epitaxial growth

In order to break through the performance limit of piezoelectric MEMS, we have been searching for thin films with giant piezoelectric properties. In this study, a single crystal thin film of Sm-doped Pb(Mg_1/3,Nb_2/3)O₃-PbTiO₃ (Sm-PMN-PT) was sputter deposited on a Si substrate with a buffer layer deposited as a candidate. As a result, a thin film preferentially oriented in (100)/(001) direction and consisting of pure perovskite phase was obtained. The optimal composition ratio of PMN and PT was then investigated while fixing the ratio of Sm at 2.5 mol% of the total. As a result, the piezoelectric constant |e_31,f| reached about 25 C/m² when PMN:PT was 50:50.