[16p-B1-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[16p-B1-1] Periodic Dimple Lines Observed in the (100) Grain-Boundary Free Si Thin Films Obtained by the CW Laser Crystallization

〇Nobuo Sasaki^1,2, Satoshi Takayama², Yukiharu Uraoka² (1.Sasaki Consulting, 2.NAIST)

Keywords:

cw laser crystallization,dimple lines,AFM

In the Grain-Boundary Free Si thin films crystallized by the CLC, periodic dimple lines were observed, The period of the lines was 3.43 μm and the amplitude was 3~5 nm. This dimple is a Hyperfine Subboundary and consists of dislocation columns whose distances are more than 11 nm.