The 85th JSAP Autumn Meeting 2024
Advanced Search

Session Details

Oral presentation13 Semiconductors : 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[16p-B1-1~14]13.4 Si processing /Si based thin film / MEMS / Equipment technology

Mon. Sep 16, 2024 1:00 PM - 5:00 PM JST
Mon. Sep 16, 2024 4:00 AM - 8:00 AM UTC
B1 (Exhibition Hall B)
Wenchang Yeh(Shimane Univ.), Tatsuya Okada(Univ. of the Ryukyus), Naoya Okada(AIST)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[16p-B1-1]Periodic Dimple Lines Observed in the (100) Grain-Boundary Free Si Thin Films Obtained by the CW Laser Crystallization

〇Nobuo Sasaki1,2, Satoshi Takayama2, Yukiharu Uraoka2 (1.Sasaki Consulting, 2.NAIST)
Comment()
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[16p-B1-2]DG poly-Ge TFTs fabricated on glass substrates by using gate last process

〇(M2)Daiki Goshima1, Akito Kurihara1, Sho Suzuki1, Akito Hara1 (1.Tohoku Gakuin Univ)
Comment()
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[16p-B1-3]4T vertical poly-Si TFT for pH sensor on glass substrates

〇Kosei Suzuki1, Tetsuo Tabei2, Akito Hara1 (1.Tohoku Gakuin Univ., 2.Hiroshima Univ. RISE)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[16p-B1-4]Crystallization of a-Si Films Deposited by CVD using Blue Direct Diode Laser

〇Tatsuya Okada1, Takashi Noguchi1, Mitsuoki Hishida2, Kentaro Miyano2, Naohiko Kobata2, Masaki Nobuoka2 (1.Univ. Ryukyus, 2.Panasonic Connect)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16p-B1-5]Performance Improvement of n-channel TFT on Solid-Phase Crystallized poly-Ge by Channel Width Shrinking

〇linyu huang1, atsuki morimoto1, kota igura2, takamitsu ishiyama2, kaoru toko2, dong wang1, keisuke yamamoto1 (1.Kyushu Univ., 2.Univ. of Tsukuba)
Comment()
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-B1-6]Formation of Polycrystalline Ge CMOS Inverter on Glass Substrate

〇Atsuki Morimoto1, Linyu Huang1, Kota Igura2, Takamitsu Ishiyama2, Kaoru Toko2, Dong Wang1, Keisuke Yamamoto1 (1.Kyushu Univ., 2.Univ. of Tsukuba)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-B1-7]µCLS (001) Single Crystal MOSFET Fabricated by All Sputter Processes

〇(M1)Ryota Nosu1, Wenchang Yeh1 (1.Shimane Univ.)
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[16p-B1-8]Spectroscopic ellipsometry characterization of SiGe/Si super lattice toward building of 300 mm GAAFET pilot-line

〇Naoto Kumagai1, Akio Fukushima1, Chia-Tsong Chen1, Kazuya Uejima1, Toshifumi Irisawa1, Yoshihiro Hayashi1 (1.AIST)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[16p-B1-9]Mechanisms Controlling the Effective Work Function of TiN/TiAlC Metal Gates for Advanced Gate-all-around CMOS

〇Kenzo Manabe1, Kazuya Uejima1, Hiroyuki Ota1, Yukinori Morita1, Toshifumi Irisawa1, Yoshihiro Hayashi1 (1.SFRC, AIST)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-B1-10]Study on Selective Dry Etching of Epitaxially Grown Si0.7Ge0.3 and Si using H2 Diluted CF4

〇(M1)Kotaro Ozaki1, Noriharu Takada2, Takayoshi Tsutsumi2, Kenji Ishikawa2, Yuji Yamamoto3, Wei-Chen Wen3, Katsunori Makihara1 (1.Nagoya Univ., 2.Nagoya Univ. cLPS, 3.IHP)
Comment()
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[16p-B1-11]Ni-silicide Formation and Crystalline Phase Control

〇Shun Tanida1, Noriyuki Taoka2, Katsunori Makihara1 (1.Nagoya Univ., 2.Aichi Inst. Tech.)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-B1-12]Evaluation of Interstitial Si Diffusion generated by Si Trench Processing using Low Temperature Photoluminescence Spectroscopy

〇Ryota Fujimori1, Yuta Ito1, Ryo Yokogawa1,2, Atsushi Ogura1,2, Kazuto Kawakatsu3, Nobuyuki Kuboi3, Koichiro Saga3, Yuto Iwamoto3 (1.Meiji Univ., 2.MREL, 3.Sony Semiconductor Solutions)
Comment()
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[16p-B1-13]Effects of unifying temperature over a substrate during Freeze Cleaning Method

〇Satoshi Nakamura1, Kensuke Demura1, Masashi Yamage1, Kei Hattori2 (1.Shibaura Mechatronics Corp., 2.Nagoya Univ. Center for Low-Temperature Plasma Sciences)
Comment()
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[16p-B1-14]Evaluation of anomaly detection using cluster analysis for semiconductor manufacturing equipment

〇Yuki Shiga1, Toshiya Hirai1,2, Manabu Kano2 (1.KOKUSAI ELECTRIC, 2.Kyoto Univ.)
Comment()
Back to Category List