[16p-B1-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-B1-6] Formation of Polycrystalline Ge CMOS Inverter on Glass Substrate

〇Atsuki Morimoto¹, Linyu Huang¹, Kota Igura², Takamitsu Ishiyama², Kaoru Toko², Dong Wang¹, Keisuke Yamamoto¹ (1.Kyushu Univ., 2.Univ. of Tsukuba)

Keywords:

polycrystalline germanium,thin-film-transistor,CMOS

In the present study, we demonstrated CMOS inverter circuits composed of accumulation mode p-channel TFT and inversion mode n-channel TFT at a low-temperature process (< 500 °C) on polycrystalline Ge formed on the glass substrate by solid-phase crystallization method. The transfer characteristics were confirmed using DC and AC input signals. The fabricated device successfully inverted the input voltage for both DC and AC signals. Especially it was confirmed that the AC input signal was inverted without delay, successfully demonstrating inverter operation.