[16p-B2-1~15] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-B2-4] I-V characteristics and scattering times temperature dependences in AlAs/GaAs superlattices

〇Nagi Maeda¹, Xiangyu Zhu¹, Marc Bescond², Naomi Nagai¹, Kazuyuki Kuroyama¹, Kazuhiko Hirakawa¹ (1.IIS, INQIE, Univ. of Tokyo, 2.IN2MP, Aix-Marseille Univ.)

Keywords:

superlattices,Bloch oscillation

As one of the approaches to the terahertz (THz) frequency range, more than 50 years have passed since Esaki and Tsu proposed an oscillator utilizing Bloch oscillations of electrons in semiconductor superlattices. However, the realization of Bloch oscillators is still pending due to the existence of high-field domains in the negative differential conductance region, where Bloch gain occurs. In this presentation, we will investigate the electrical transport properties of doped AlAs/GaAs superlattices based on the electron scattering time obtained by analyzing the current-voltage (I-V) characteristics.