Session Details
[16p-B2-1~15]13.6 Nanostructures, quantum phenomena, and nano quantum devices
Mon. Sep 16, 2024 1:00 PM - 5:15 PM JST
Mon. Sep 16, 2024 4:00 AM - 8:15 AM UTC
Mon. Sep 16, 2024 4:00 AM - 8:15 AM UTC
B2 (Exhibition Hall B)
Toshihiro Nakaoka(Sophia Univ.), Ryuichi Ohta(NTT), Satoshi Hiura(Hokkaido Univ.)
[16p-B2-1]Terahertz wave radiation from plasmon excited by ultrashort optical pulse pair
〇Takayuki Hasegawa1, Osamu Kojima2 (1.Osaka Inst. Technol., 2.Chiba Inst. Technol.)
[16p-B2-2]Excitation Power Dependence of Photocurrent of Photoconductive Antenna with Multiple-stacked InAs/GaAs Quantum Dots for various excitation wavelengths
〇Toshiyuki Kaizu1, Osamu Kojima2, Yasuo Minami3, Takahiro Kitada4, Yukihiro Harada15, Takashi Kita5, Osamu Wada6 (1.Kyoto Univ., 2.Chiba Inst. Tech., 3.Nihon Univ., 4.NIT of Matsue, 5.Grad. Sch. of Eng., Kobe Univ., 6.Kobe Univ.)
[16p-B2-3]Filtering effects of laser spectrum on pump-probe signals in a GaAs/AlAs multiple quantum well
〇Osamu Kojima1, Ibuki Nishida1, Taishi Okatsu1 (1.Chiba Inst. Tech.)
[16p-B2-4]I-V characteristics and scattering times temperature dependences in AlAs/GaAs superlattices
〇Nagi Maeda1, Xiangyu Zhu1, Marc Bescond2, Naomi Nagai1, Kazuyuki Kuroyama1, Kazuhiko Hirakawa1 (1.IIS, INQIE, Univ. of Tokyo, 2.IN2MP, Aix-Marseille Univ.)
[16p-B2-5]Lattice temperature dependence of electron cooling in semiconductor double barrier heterostructures
〇Xiangyu Zhu1, Alec Cochard1,4, Gueric Etesse2, Marc Bescond1,2, Gerald Bescond3, Naomi Nagai1, Kazuhiko Hirakawa1 (1.IIS/LIMMS, UTokyo, 2.IM2NP-CNRS, AMU, 3.Ecole Normale Superieure, 4.ESPCI Paris)
[16p-B2-6]Oscillation characteristics of circular polarization degree of photoluminescence from InAs quantum dots tunnel-coupled with a GaNAs quantum well with magnetic field
〇Shunsuke Sakano1, Satoshi Hiura1, Junichi Takayama1, Akihiro Murayama1 (1.IST, Hokkaido Univ.)
[16p-B2-7]Optical excitation conditions and thermal effects on single InP/InAs nanowire luminescence
〇Hikari Tahara1, Takumi Matsumoto1, Guoqiang Zhang2, Takehiko Tawara1 (1.Nihon Univ., 2.NTT Bas. Res. Lab.)
[16p-B2-8]Control of QD emission energy by using a piezo-based strain tuning device
〇Kosei Tabata1, Reina Kaji1, Satoru Odashima1, Satoru Adachi1 (1.Grad. Sch. Eng., Hokkaido Univ.)
[16p-B2-9]Enhancement of PL Emission from Si Quantum Dots Using Hot N+ Ion Implantation
〇Kazumasa Yonetsu1, Tomohisa Mizuno1 (1.Kanagawa Univ.)
[16p-B2-10]GeO2 Quantum Dots Fabricated by Hot-Ge-Ion Implantation into SiO2 Layer
〇(M2)Hayato Ban1, Tomohisa Mizuno1 (1.Kanagawa Univ.)
[16p-B2-11]Multi-color luminescent Si quantum dot colloids prepared by low-temperature thermal cracking of porous Si in organic solvent with reaction accelerating solvent
〇(M2)Tomoki Konishi1, Toshihiro Nakamura1, Nobuyoshi Koshida2 (1.Hosei Univ., 2.Tokyo Univ. of A&T)
[16p-B2-12]Electron transport through single perovskite quantum dots proved by nanogap metal leads
〇Ousuke Takahashi1, Tomohiro Otsuka2,3, Kenji Shibata1 (1.Tohoku Inst. Tech., 2.Tohoku Univ., 3.RIKEN CEMS)
[16p-B2-13]Electric-double-layer transistors with single colloidal PbS quantum dots
〇Tomoki Takiguchi1, Ohsuke Takahashi1, Tomohiro Otsuka2,3, Kenji Shibata1 (1.Tohoku Inst. Tech., 2.RIEC, Tohoku Univ., 3.RIKEN CEMS)
[16p-B2-14]Demonstration of InGaAs nanowire vertical gate-all-around transistors on SOI
〇Keita Taniyama1, Yuki Takeda1, Yuki Azuma1, Ziye Zheng1, Junichi Motohisa1, Katsuhiro Tomioka1 (1.Hokkaido Univ.)
[16p-B2-15]Design of new single-electron circuit to express weight function of Prim's algorithm based on signal-propagation-control circuit
〇Shunpei Ishii1, Takahide Oya1,2 (1.Grad. School Eng. Sci, Yokohama Nat'l Univ., 2.IMS, Yokohama Nat'l Univ.)