[16p-B2-1~15] 13.6 Nanostructures, quantum phenomena, and nano quantum devices | The 85th JSAP Autumn Meeting 2024

Advanced Search

Session Details

Oral presentation13 Semiconductors : 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[16p-B2-1~15]13.6 Nanostructures, quantum phenomena, and nano quantum devices

Mon. Sep 16, 2024 1:00 PM - 5:15 PM JST
Mon. Sep 16, 2024 4:00 AM - 8:15 AM UTC

B2 (Exhibition Hall B)

Toshihiro Nakaoka(Sophia Univ.), Ryuichi Ohta(NTT), Satoshi Hiura(Hokkaido Univ.)

Download PDF Zoom

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[16p-B2-1]Terahertz wave radiation from plasmon excited by ultrashort optical pulse pair

〇Takayuki Hasegawa¹, Osamu Kojima² (1.Osaka Inst. Technol., 2.Chiba Inst. Technol.)

Download PDFComment()

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[16p-B2-2]Excitation Power Dependence of Photocurrent of Photoconductive Antenna with Multiple-stacked InAs/GaAs Quantum Dots for various excitation wavelengths

〇Toshiyuki Kaizu¹, Osamu Kojima², Yasuo Minami³, Takahiro Kitada⁴, Yukihiro Harada1⁵, Takashi Kita⁵, Osamu Wada⁶ (1.Kyoto Univ., 2.Chiba Inst. Tech., 3.Nihon Univ., 4.NIT of Matsue, 5.Grad. Sch. of Eng., Kobe Univ., 6.Kobe Univ.)

Download PDFComment()

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[16p-B2-3]Filtering effects of laser spectrum on pump-probe signals in a GaAs/AlAs multiple quantum well

〇Osamu Kojima¹, Ibuki Nishida¹, Taishi Okatsu¹ (1.Chiba Inst. Tech.)

Download PDFComment()

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-B2-4]I-V characteristics and scattering times temperature dependences in AlAs/GaAs superlattices

〇Nagi Maeda¹, Xiangyu Zhu¹, Marc Bescond², Naomi Nagai¹, Kazuyuki Kuroyama¹, Kazuhiko Hirakawa¹ (1.IIS, INQIE, Univ. of Tokyo, 2.IN2MP, Aix-Marseille Univ.)

Download PDFComment()

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)English Presentation

[16p-B2-5]Lattice temperature dependence of electron cooling in semiconductor double barrier heterostructures

〇Xiangyu Zhu¹, Alec Cochard^1,4, Gueric Etesse², Marc Bescond^1,2, Gerald Bescond³, Naomi Nagai¹, Kazuhiko Hirakawa¹ (1.IIS/LIMMS, UTokyo, 2.IM2NP-CNRS, AMU, 3.Ecole Normale Superieure, 4.ESPCI Paris)

Download PDFComment()

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Highlighted Presentation

[16p-B2-6]Oscillation characteristics of circular polarization degree of photoluminescence from InAs quantum dots tunnel-coupled with a GaNAs quantum well with magnetic field

〇Shunsuke Sakano¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

Download PDFComment()

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-B2-7]Optical excitation conditions and thermal effects on single InP/InAs nanowire luminescence

〇Hikari Tahara¹, Takumi Matsumoto¹, Guoqiang Zhang², Takehiko Tawara¹ (1.Nihon Univ., 2.NTT Bas. Res. Lab.)

Download PDFComment()

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-B2-8]Control of QD emission energy by using a piezo-based strain tuning device

〇Kosei Tabata¹, Reina Kaji¹, Satoru Odashima¹, Satoru Adachi¹ (1.Grad. Sch. Eng., Hokkaido Univ.)

Download PDFComment()

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-B2-9]Enhancement of PL Emission from Si Quantum Dots Using Hot N⁺ Ion Implantation

〇Kazumasa Yonetsu¹, Tomohisa Mizuno¹ (1.Kanagawa Univ.)

Download PDFComment()

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-B2-10]GeO₂ Quantum Dots Fabricated by Hot-Ge-Ion Implantation into SiO₂ Layer

〇(M2)Hayato Ban¹, Tomohisa Mizuno¹ (1.Kanagawa Univ.)

Download PDFComment()

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[16p-B2-11]Multi-color luminescent Si quantum dot colloids prepared by low-temperature thermal cracking of porous Si in organic solvent with reaction accelerating solvent

〇(M2)Tomoki Konishi¹, Toshihiro Nakamura¹, Nobuyoshi Koshida² (1.Hosei Univ., 2.Tokyo Univ. of A&T)

Download PDFComment()

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-B2-12]Electron transport through single perovskite quantum dots proved by nanogap metal leads

〇Ousuke Takahashi¹, Tomohiro Otsuka^2,3, Kenji Shibata¹ (1.Tohoku Inst. Tech., 2.Tohoku Univ., 3.RIKEN CEMS)

Download PDFComment()

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[16p-B2-13]Electric-double-layer transistors with single colloidal PbS quantum dots

〇Tomoki Takiguchi¹, Ohsuke Takahashi¹, Tomohiro Otsuka^2,3, Kenji Shibata¹ (1.Tohoku Inst. Tech., 2.RIEC, Tohoku Univ., 3.RIKEN CEMS)

Download PDFComment()

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-B2-14]Demonstration of InGaAs nanowire vertical gate-all-around transistors on SOI

〇Keita Taniyama¹, Yuki Takeda¹, Yuki Azuma¹, Ziye Zheng¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.Hokkaido Univ.)

Download PDFComment()

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[16p-B2-15]Design of new single-electron circuit to express weight function of Prim's algorithm based on signal-propagation-control circuit

〇Shunpei Ishii¹, Takahide Oya^1,2 (1.Grad. School Eng. Sci, Yokohama Nat'l Univ., 2.IMS, Yokohama Nat'l Univ.)

Download PDFComment()

Back to Category List

Session Details

[16p-B2-1~15]13.6 Nanostructures, quantum phenomena, and nano quantum devices

[16p-B2-1]Terahertz wave radiation from plasmon excited by ultrashort optical pulse pair

[16p-B2-2]Excitation Power Dependence of Photocurrent of Photoconductive Antenna with Multiple-stacked InAs/GaAs Quantum Dots for various excitation wavelengths

[16p-B2-3]Filtering effects of laser spectrum on pump-probe signals in a GaAs/AlAs multiple quantum well

[16p-B2-4]I-V characteristics and scattering times temperature dependences in AlAs/GaAs superlattices

[16p-B2-5]Lattice temperature dependence of electron cooling in semiconductor double barrier heterostructures

[16p-B2-6]Oscillation characteristics of circular polarization degree of photoluminescence from InAs quantum dots tunnel-coupled with a GaNAs quantum well with magnetic field

[16p-B2-7]Optical excitation conditions and thermal effects on single InP/InAs nanowire luminescence

[16p-B2-8]Control of QD emission energy by using a piezo-based strain tuning device

[16p-B2-9]Enhancement of PL Emission from Si Quantum Dots Using Hot N+ Ion Implantation

[16p-B2-10]GeO2 Quantum Dots Fabricated by Hot-Ge-Ion Implantation into SiO2 Layer

[16p-B2-11]Multi-color luminescent Si quantum dot colloids prepared by low-temperature thermal cracking of porous Si in organic solvent with reaction accelerating solvent

[16p-B2-12]Electron transport through single perovskite quantum dots proved by nanogap metal leads

[16p-B2-13]Electric-double-layer transistors with single colloidal PbS quantum dots

[16p-B2-14]Demonstration of InGaAs nanowire vertical gate-all-around transistors on SOI

[16p-B2-15]Design of new single-electron circuit to express weight function of Prim's algorithm based on signal-propagation-control circuit

[16p-B2-9]Enhancement of PL Emission from Si Quantum Dots Using Hot N⁺ Ion Implantation

[16p-B2-10]GeO₂ Quantum Dots Fabricated by Hot-Ge-Ion Implantation into SiO₂ Layer