[16p-C302-1~18] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[16p-C302-10] Electrical characteristics of thick-metal-film interconnects on silicon oxide films by directly bonding of Al foils

〇(M2)Saki Murotani¹, Sakura Uehara², Eiji Shikoh¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka Metropolitan Univ., 2.Osaka City Univ.)

Keywords:

surface activated bonding,thick-metal-film interconnects,coplanar waveguide

We directly bonded 17-micron thick metal foils to 2-micron thick oxide films synthesized on Si wafers using the surface activated bonding technology and fabricated thick-metal-film interconnects on the oxide films as the first step for combining directly bonding and wiring technologies and realizing interconnects with low-loss characteristics. We found that the oxide film after activating its surface was insulating. We also found that coplanar waveguides on the oxide film revealed low-loss characteristics in comparison with those fabricated on the Si wafer.