[16p-C302-1~18] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-C302-11] Early non-destructive detection of electromigration studied by sub-THz ultrasound

〇Akira Nagakubo¹, Shuhei Izuma¹, Atsushi Nishimura², Yoshiro Kabe², Hirotsugu Ogi¹ (1.The Univ. of Osaka, 2.Skyworks Filter Solutions Japan Co., Ltd.)

Keywords:

Electromigration,In-situ monitoring,Ultrasonics

Electromigration (EM), in which high-density current diffuses atoms, has long been a problem, and it is important to detect the generation of voids due to EM in order to evaluate device reliability. In this study, we propose a nondestructive, in-situ monitoring method using ultrasonic waves of sub-THz frequency and wavelength in the order of nm. We succeeded in detecting initial voids by ultrasonic echoes when a high-density current was applied to the nanowires and no change in electrical resistance was observed.