[16p-C302-1~18] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[16p-C302-3] Passivation of GeSn surface using ALD-GeO₂

〇Yoshiki Kato¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2, Shigehisa Shibayama¹ (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:

Atomic Layer Deposition,GeSn,passivation