[16p-C302-1~18] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-C302-4] [INVITED] Reliability degradation mechanism in atomic layer deposited amorphous/polycrystalline In-Ga-O channel transistors

〇Takanori Takahashi¹, Mutsunori Uenuma², Masaharu Kobayashi^3,4, Yukiharu Uraoka¹ (1.NAIST, 2.AIST, 3.IIS., Univ. of Tokyo, 4.Univ. of Tokyo)

Keywords:

oxide semiconductor,thin-film transistor,atomic layer deposition