[16p-C302-1~18] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-C302-6] A Nanosheet Oxide Semiconductor FET Using ALD InGaZnOx Channel

〇(M2)Kota Sakai¹, Kaito Hikake¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi^1,2 (1.IIS, The Univ. Tokyo, 2.d.lab, The Univ. Tokyo)

Keywords:

Oxide Semiconductor,ALD,IGZO

As a deposition method for three-dimensional integration, atomic layer deposition (ALD) has shown promise in terms of highly controllable deposition at the atomic layer level and conformal deposition on high-aspect-ratio structures. Although IGZO transistors have been investigated to realise high mobility, high reliability and normally-off characteristics, systematic investigation of the composition and film thickness by ALD has not been well reported. In this study, based on our previously reported studies of ALD InGaOx (IGO) transistors with high mobility and thermal tolerance, we deposited IGZO films by adding Zn to IGO and investigated the effects on performance and reliability.