Presentation Information

[16p-C302-7]Study on High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs for Device Scaling in Monolithic 3D Integration

Kaito Hikake1, 〇Xingyu Huang1, Sung-hun Kim1, Kota Sakai1, Zhuo Li1, Tomoko Mizutani1, Takuya Saraya1, Toshiro Hiramoto1, Takanori Takahashi2, Mutsunori Uenuma2, Yukiharu Uraoka2, Masaharu Kobayashi1,3 (1.IIS, Univ. of Tokyo, 2.NAIST, 3.d.lab, Univ. of Tokyo)

Keywords:

oxide semiconductor,high-field transport,statistical variability

We have investigated the device scaling of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3D integration in terms of high-field transport and statistical variability. We fabricated sub-100nm Lg NS OS FETs and demonstrated unsaturated carrier velocity behavior. We obtained statistical variability data of NS OS FETs, which is comparable or better than bulk Si CMOS. This work provides an evidence of the scaling benefit of NS OS FETs for 3D LSI application.

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