[16p-C302-1~18] 13.5 デバイス／配線／集積化技術

15:00 〜 15:15英語発表

[16p-C302-7] Study on High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs for Device Scaling in Monolithic 3D Integration

Kaito Hikake¹, 〇Xingyu Huang¹, Sung-hun Kim¹, Kota Sakai¹, Zhuo Li¹, Tomoko Mizutani¹, Takuya Saraya¹, Toshiro Hiramoto¹, Takanori Takahashi², Mutsunori Uenuma², Yukiharu Uraoka², Masaharu Kobayashi^1,3 (1.IIS, Univ. of Tokyo, 2.NAIST, 3.d.lab, Univ. of Tokyo)

キーワード：

oxide semiconductor、high-field transport、statistical variability

We have investigated the device scaling of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3D integration in terms of high-field transport and statistical variability. We fabricated sub-100nm Lg NS OS FETs and demonstrated unsaturated carrier velocity behavior. We obtained statistical variability data of NS OS FETs, which is comparable or better than bulk Si CMOS. This work provides an evidence of the scaling benefit of NS OS FETs for 3D LSI application.