[16p-C32-1~12] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[16p-C32-5] Fabrication of orthorhombic AgTe by room temperature sputtering deposition

〇(B)Yuta Tsuchihashi¹, Jun Yamasawa¹, Keito Tsukamoto¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

Keywords:

chalcogenide

Several metastable phases with potentially innovative properties are difficult to synthesize. Orthorhombic AgTe, considered to be one such phase, was not artificially prepared until 2021. We reported the preparation of orthorhombic AgTe by anomalous diffusion from Ag nanoparticles in 2021. In this study, we report the formation of orthorhombic AgTe by sputter deposition at room temperature, a process compatible with semiconductor technology. The deposited thin films contained orthorhombic AgTe nanocrystals, amorphous Ag_xTe_1-x, hexagonal Ag_5−δTe₃, and trigonal Te.