Session Details

[16p-C32-1~12]16.1 Fundamental properties, evaluation, process and devices in disordered materials

Mon. Sep 16, 2024 1:15 PM - 4:45 PM JST
Mon. Sep 16, 2024 4:15 AM - 7:45 AM UTC
C32 (Hotel Nikko 3F)
Kotaro Makino(AIST), Yi Shuang(Tohoku University), Mihyeon Kim(東北大)

[16p-C32-1]The Surface Color Control of Zr Based Bulk Metal Glass by Low-Pressure Oxidation

〇(M1)Taishi Hirai1, Takumi Sagi1, Yoshiharu Enta1, Nozomu Togashi2 (1.Hirosaki Univ., 2.Orbray)

[16p-C32-2]Theoretical Study on Local Structures and Network Connectivity in Fe–Si–B Amorphous Alloys

〇Ryouhei Ikebuchi1, Hirayama Naomi1, Shimono Masato2 (1.Shimane Univ., NEXTA, 2.NIMS)

[16p-C32-3]Crystallization of amorphous silicon films by Flash Lamp Annealing on polycrystalline Si formed by AIC

〇(M2)Baitong Li1, Huynh Thi Cam Tu1, Keisuke Ohdaira1 (1.JAIST)

[16p-C32-4]Generation of fine nanoparticles by pulsed plasma method

〇satoshi morinaga1, Shinichi Yoda1, Souta Osumi2, Makoto Tokuda2 (1.KYOSEKI CO.,LTD, 2.Kumamoto University)

[16p-C32-5]Fabrication of orthorhombic AgTe by room temperature sputtering deposition

〇(B)Yuta Tsuchihashi1, Jun Yamasawa1, Keito Tsukamoto1, Toshihiro Nakaoka1 (1.Sophia Univ.)

[16p-C32-6]Resistance switching in AgTe-based thin films and enhanced nonvolatility by RF wave application

〇(B)Jun Yamasawa1, Yuta Tuchihashi1, Keito Tsukamoto1, Toshihiro Nakaoka1 (1.Sophia Univ.)

[16p-C32-7]Phenomena of photoinduced bending of As2S3 bulk glass and fiber

〇Akira Saitoh1 (1.Ehime Univ.)

[16p-C32-8]Phase Change Memory Applications of Low-Melting 2D Van der Waals Transition-Metal Chalcogenide NbTe4

〇Yi Shuang1, Qian Chen1,5, Mihyeon Kim2, Yinli Wang2, Yuta Saito2,3, Shogo Hatayama3, Paul Fons4, Daisuke Ando2, Momoji Kubo5, Yuji Sutou1,2 (1.Tohoku Univ. (AIMR), 2.Tohoku Univ, (Eng), 3.AIST, 4.Keio Univ., 5.Tohoku Univ. (IMR))

[16p-C32-9]Optical and electrical properties of Sb-Se thin films

〇Wataru Sawata1, Gotoh Tamihiro1 (1.Gunma Univ.)

[16p-C32-10]Step-height measurement using interferometric microscope on phase change patterns in amorphous Ge-Sb-Te film

〇Kentaro Sugawara1, Tamihiro Gotoh2 (1.NMIJ/AIST, 2.Gunma Univ.)

[16p-C32-11]Phase change behavior of Mo-N semiconductor thin film

〇Yusuke Hatooka1, Yi Shuang2, Daisuke Ando1, Yuji Sutou1,2 (1.Tohoku Univ. (Eng.), 2.Tohoku Univ. (AIMR))

[16p-C32-12]Thermal stability of TM-Ge-Te amorphous chalcogenide for selector application

〇Keisuke Hamano1,2, Eisuke Takeuchi1, Shogo Hatayama2, Yuta Saito3, Paul Fons1 (1.Keio Univ., 2.AIST, 3.Tohoku Univ.)