[16p-C32-1~12] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-C32-6] Resistance switching in AgTe-based thin films and enhanced nonvolatility by RF wave application

〇(B)Jun Yamasawa¹, Yuta Tuchihashi¹, Keito Tsukamoto¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

Keywords:

chalcogenide,RF wave,Resistance switching

Recently, Ag-Te materials, such as monoclinic Ag₂Te, have attracted significant attention due to their unique properties, such as relatively large magnetoresistance, high electrical conductivity, and high thermoelectric conversion efficiency. We report our observation of resistive switching and the increase in nonvolatility due to the application of RF waves in thin films prepared by RF magnetron sputtering using an Ag:Te = 1:1 target.