[16p-C32-1~12] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[16p-C32-9] Optical and electrical properties of Sb-Se thin films

〇Wataru Sawata¹, Gotoh Tamihiro¹ (1.Gunma Univ.)

Keywords:

chalcogenide materials,phase-change memory,electrical resistivity

In recent years, research on phase-change memory has become active due to the high performance of computer storage media. Chalcogenide materials such as Ge-Sb-Te and Ge-Si-As-Te systems are used, but by replacing them with binary chalcogenide materials, it is expected to simplify composition control, reduce manufacturing costs, and improve product reliability. Against this background, we focused on Sb-Se compounds, one of the binary chalcogenide materials. Sb-Se thin films were fabricated through vacuum deposition, and the changes in optical band gap, electrical resistivity, and activation energy induced by heat treatment were investigated to assess their potential applications.