[17a-B2-1~9] 15.7 Crystal characterization, impurities and crystal defects

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-B2-1] Analysis of an oblique threading edge dislocation in 4H-SiC epilayer.

〇Chiharu Ota¹, Nishio Johji¹, Kushibe Mitsuhiro¹, Ryosuke Iijima¹ (1.R&D Center, Toshiba)

Keywords:

SiC,Threading edge dislocation,partial dislocation pairs