[17a-B2-1~9] 15.7 Crystal characterization, impurities and crystal defects

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[17a-B2-3] The effect of transparency of a crystal and the melt on twisting during CZ-Ga₂O₃ growth

〇Koichi Kakimoto¹, Taketoshi Tomida², Vladimir Kochurikhin², Kei Kamada¹, Satoshi Nakano³, Akira Yoshikawa⁴ (1.NICHe, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.IMR, Tohoku Univ.)

Keywords:

semiconductor,oxide,simulation

This paper reports the effect of transparency of a crystal and the melt on twistin gduring CZ-Ga₂O₃ growth. The model includs radiative heat transfe in both the crystal and the melt by using Rossland approximation. The results indicates that the transparency of the crystal is more effective to formation of twisting than that of the melt.