[17a-C301-1~10] 6.4 Thin films and New materials

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-C301-10] Study of carrier concentration dependence of p-type Si substrate on electronic properties of n-type Ti_0.3Zn_0.7O_1.3 for tunnel FETs

〇(M1)Kenta Ogawa^1,2, Toyohiro Chikyo², Atsushi Ogura^1,3, Takahiro Nagata^2,1 (1.Meiji Univ., 2.NIMS, 3.MREL)

Keywords:

Tunnel FETs,Thin film material evaluation