Session Details

[17a-C301-1~10]6.4 Thin films and New materials

Tue. Sep 17, 2024 9:00 AM - 11:30 AM JST
Tue. Sep 17, 2024 12:00 AM - 2:30 AM UTC
C301 (Hotel Nikko 30F)
Takahiko Kawaguchi(Shizuoka Univ.)

[17a-C301-1]Topochemical fluorination of perovskite SrCeO3 thin films

〇Ayuka Nakano1, Miku Hagiwara1, Tsukasa Katayama2, Yasushi Hirose3, Akira Chikamatsu1 (1.Ochanomizu Univ., 2.Hokkaido Univ., 3.Tokyo Metropolitan Univ.)

[17a-C301-2]Fluoride ion conductivity of Sr0.5Ce0.5F2.5 epitaxial thin films

〇Miku Hagiwara1, Ayuka Nakano1, Erika Fukushi2, Hiroyuki Oguchi2, Tsukasa Katayama3, Yasushi Hirose4, Akira Chikamatsu1 (1.Ochanomizu Univ., 2.Shibaura Univ., 3.Hokkaido Univ., 4.Tokyo Metropolitan Univ.)

[17a-C301-3]Evaluation of ionic conductivity of LiBH4 thin film for battery application

〇(D)Erika Fukushi1, Takumi Tozawa1, Hiroyuki Oguchi1 (1.Shibaura Tech.)

[17a-C301-4]Control of physical properties of LiH using epitaxial thin films

〇Kazuma Owaki1, Kota Munefusa1, Takayuki Harada2, Hiroyuki Oguchi1 (1.Shibaura Tech., 2.NIMS)

[17a-C301-5]Hydrogen gas reaction in optical cavity type of sensor elements

〇Haruki Yamane1, Satoshi Yanase1, Koki Takahashi2, Nobuya Seko2, Koji Shigemura2 (1.Akita Ind. Tech., 2.Tianma Japan)

[17a-C301-6]Investigation of radical hydrogen supply conditions to grow high quality MgH2 thin films

〇(M2)Yuki Shimoman1, Kota Munefusa1, Yosuke Isoda2, Takuya Majima3, Daisuke Kan2, Takayuki Harada4, Hiroyuki Oguchi1 (1.Shibaura Tech., 2.ICR, Kyoto Univ., 3.Kyoto Univ., 4.NIMS)

[17a-C301-7]Preparation of rare-earth nickel oxide thin films with embedded Pt nanoparticles using multi-target deposition and their hydrogen storage properties

〇(M2)Kohei Shimoyama1, Azusa Hattori1, Haobo Li1, Hidekazu Tanaka1 (1.SANKEN, Osaka Univ.)

[17a-C301-8]Enhanced Conductivity of CuI Doped with Group 16 Elements

〇Mashu Toyoda1, Makoto Ando1, Hidenobu Murata2, Naoomi Yamada1 (1.Chubu Univ., 2.JFCC)

[17a-C301-9]Cu3N Growth by Mist CVD on (001)SrTiO3 Substrate

〇(M1)Chisato Tsukioka1, Shogo Yoshida1, Naoki Sugita1, Hiroki Nagai1, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1 (1.Kogakuin Univ.)

[17a-C301-10]Study of carrier concentration dependence of p-type Si substrate on electronic properties of n-type Ti0.3Zn0.7O1.3 for tunnel FETs

〇(M1)Kenta Ogawa1,2, Toyohiro Chikyo2, Atsushi Ogura1,3, Takahiro Nagata2,1 (1.Meiji Univ., 2.NIMS, 3.MREL)