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[17a-P01-23]Graphene growth on Ge(110) from photoresist as a solid carbon source

〇(M1)Reiji Takeda1, Fumihiko Maeda1 (1.Fukuoka Inst. of Tech.)
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Keywords:

graphene,resist,germanium

In the chemical vapor deposition (CVD) method, it is essential to precisely control the flow of graphene to form uniform graphene throughout the wafer. Therefore, graphene growth is attempted by forming a thin film of organic polymer such as resist followed by heating. Since metallic single crystals are not easy to obtain, we focused on Ge wafers, which are less expensive than metals and can be used as large-area substrates. The experimental results showed for the first time that graphene can be grown on Ge substrates using solid materials.

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