[17a-P01-1~66] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[17a-P01-44] Direct growth of BN thick film on Si substrate by atomic layer deposition

〇Jun Usami¹, Yuki Okamoto¹, Takeshi Fuji¹ (1.AIST)

Keywords:

Boron Nitride

In recent years, hexagonal boron nitride (BN) thin films have been used as substrates for two-dimensional materials. Because of their insulating properties and thermal conductivity, these films are expected to be applied to Si-based trench structure devices and MEMS. Therefore, atomic layer deposition (ALD), which offers high coverage and layer control, is considered a useful deposition method. Using ALD with BCl3 and NH3 as precursors, films were deposited at temperatures ranging from 800°C to 1150°C. The film quality was evaluated using IR and TEM, confirming the formation of highly continuous layered BN films with a thickness of over 20 nm.