[17a-P01-1~66] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[17a-P01-57] Insertion of Insulating Polymer Layer into Electrode Contact in WSe₂ MOSFET

〇(M1)Ryoichiro Naoi¹, Durgadevi Elamaran¹, Daisuke Kiriya¹ (1.The Univ. of Tokyo)

Keywords:

MOSFET

WSe₂ is attracting attention as a two-dimensional semiconductor and is expected to have p-type operation. A Schottky barrier is formed at the metal-semiconductor junction interface. The Schottky barrier is expected to vary in barrier height depending on the metal species, but in 2D semiconductors, the electrode dependence is known to be small due to the occurrence of Fermi-level pinning. In this study, we pioneered a method of inserting an insulating polymer layer just below the electrode to control the polarity of MOSFETs.