[17a-P01-1~66] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[17a-P01-62] Floating gate FET based on MoS₂ with a TaO_x/TaS₂ heterostructure

〇(M1)YUTARO SAHASHI¹, MITSURU INADA¹, SHINGO SATO¹, KEIJI UENO², MAHITO YAMAMOTO¹ (1.Kansai Univ, 2.Saitama Univ)

Keywords:

2D material,Floating gate FET,TaS2

We fabricated a floating gate FET based on a MoS₂ channel, a TaS₂ floating gate, and a TaO_x tunnel barrier that was created by the surface O₃ oxidation of TaS₂.