[17a-P01-1~66] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[17a-P01-63] Characterization of VO_x/VSe₂ heterostructure-baesd ReRAM

〇(M2)Yuta Nakamura¹, Mitsuru Inada¹, Keiji Ueno², Mahito Yamamoto¹ (1.Kansai Univ., 2.Saitama Univ.)

Keywords:

Resistive Random Access Memory,Two-dimensional materials,Silver

Resistive Random Access Memory (ReRAM) has attracted much attention for applications in computing in memory. However, in general, the operation volatge of ReRAM varies from device to device and even in a single device, which is unfavorable for applications. Previously, we have demonstrated stable operation in ReRAM based on a VO_x/VSe₂ heterostructure with a Ag electrode. In this presentation, we report retention and endurance properties of the ReRAM device.