[17a-P01-1~66] 17 Nanocarbon and Two-Dimensional Materials (Poster)

[17a-P01-7] Tracking the growth rate of semiconducting and metallic carbon nanotubes under variable temperatures

〇(M2)Ryuji Fujiwara¹, Shohei Chiashi¹, Shigeo Maruyama¹, Keigo Otsuka¹ (1.Univ. of Tokyo)

Keywords:

carbon nanotubes,semiconductor materials,growth analysis

Semiconductor carbon nanotubes (CNTs) are expected to be next-generation semiconductor materials due to their high carrier mobility and suppression of short-channel effects. Understanding the impact of synthesis conditions on the CNT growth process is crucial to obtain high-purity semiconductor CNTs. Previous studies have shown that synthesis temperature affects the ratio of semiconductor CNTs. This study tracks the growth rate of individual CNTs by varying the synthesis temperature between 800-875°C and discusses the temperature dependence of growth rates for both semiconductor and metallic CNTs.