[17p-B2-1~9] 15.7 Crystal characterization, impurities and crystal defects

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[17p-B2-1] Dislocation behavior in heavily Boron-doped <110> oriented CZ-Si single crystals

〇Hisashi Matsumura^1,2, Shingo Narimatsu¹, Hiroyuki Saito¹, Yuki Fukui², Toshinori Taishi² (1.GlobalWafers Japan Co., Ltd., 2.Shinshu Univ.)

Keywords:

Silicon,Dislocation