The 85th JSAP Autumn Meeting 2024
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Oral presentation15 Crystal Engineering : 15.7 Crystal characterization, impurities and crystal defects

[17p-B2-1~9]15.7 Crystal characterization, impurities and crystal defects

Tue. Sep 17, 2024 1:00 PM - 3:30 PM JST
Tue. Sep 17, 2024 4:00 AM - 6:30 AM UTC
B2 (Exhibition Hall B)
Ayumi Hirano(Tohoku Univ.), Kazuhisa Torigoe(SUMCO)
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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[17p-B2-1]Dislocation behavior in heavily Boron-doped <110> oriented CZ-Si single crystals

〇Hisashi Matsumura1,2, Shingo Narimatsu1, Hiroyuki Saito1, Yuki Fukui2, Toshinori Taishi2 (1.GlobalWafers Japan Co., Ltd., 2.Shinshu Univ.)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[17p-B2-2]Dislocation behavior due to thermal shock in [110]-oriented CZ-Si single crystal growth

〇Rintaro To1, Hiroki Tsukada1, Takeshi Hoshikawa1, Hiroyuki Saito2, Hisashi Matsumura2, Toshinori Taishi1 (1.Shinshu Univ., 2.GlobalWafers Japan Co., Ltd.)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[17p-B2-3]Numerical analysis on the distribution of stresses below the seeding interface in CZ-Si crystal growth

〇(M1C)Hiroki Tsukada1, Rintaro To1, Takeshi Hoshikawa1, Hiroyuki Saito2, Hisashi Matsumura1,2, Toshinori Taishi1 (1.Shinshu Univ., 2.GlobalWafers Japan Co., Ltd.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[17p-B2-4]Modification of Residual Vacancies in RTP Wafers

〇Haruo Sudo1, Hiroya Iwashiro1,2, Ken Hayakawa1 (1.GWJ, 2.Okayama Pref. Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-B2-5]Theoretical Study on Sturucture of BMD Nuclei (VOX) in RTP Wafers

〇Hiroya Iwashiro1,2, Haruo Sudo1, Ken Hayakawa1, Eiji Kamiyama1, Koji Sueoka3 (1.GlobalWafers Japan Co.,Ltd., 2.Graduate school of Okayama Pref. Univ., 3.Okayama Pref. Univ.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[17p-B2-6]Cristobalite phase inside thermally-oxidized films on Si wafers

〇Eiji Kamiyama1,2, Koji Sueoka2 (1.Globalwafers Japan Co. Ltd, 2.Okayama Pref. Univ.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[17p-B2-7]Quality of silicon substrate and point defects: 2nd generation
(12) Nonuniformity of isotopes and intrinsic point defects

〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research center)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[17p-B2-8]High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal/
2-nd generation (25) Single interstitial nitrogen, Ni

〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research center)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-B2-9]Measurement of carbon concentration in silicon crystal/ 2-nd generation
(28) Solution of middle and inner phonon band problems in infrared absorption (1)

〇Naohisa Inoue1, Shuichi Okuda1, Shuichi Kawamata1 (1.Osaka Metropolitan Univ. Radiation Research center)
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