[17p-B2-1~9] 15.7 Crystal characterization, impurities and crystal defects

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[17p-B2-2] Dislocation behavior due to thermal shock in [110]-oriented CZ-Si single crystal growth

〇Rintaro To¹, Hiroki Tsukada¹, Takeshi Hoshikawa¹, Hiroyuki Saito², Hisashi Matsumura², Toshinori Taishi¹ (1.Shinshu Univ., 2.GlobalWafers Japan Co., Ltd.)

Keywords:

Silicon,Dislocation