[17p-B2-1~9] 15.7 Crystal characterization, impurities and crystal defects

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[17p-B2-3] Numerical analysis on the distribution of stresses below the seeding interface in CZ-Si crystal growth

〇(M1C)Hiroki Tsukada¹, Rintaro To¹, Takeshi Hoshikawa¹, Hiroyuki Saito², Hisashi Matsumura^1,2, Toshinori Taishi¹ (1.Shinshu Univ., 2.GlobalWafers Japan Co., Ltd.)

Keywords:

Silicon,Dislocation,Numerical Analysis