[17p-B2-1~9] 15.7 Crystal characterization, impurities and crystal defects

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[17p-B2-4] Modification of Residual Vacancies in RTP Wafers

〇Haruo Sudo¹, Hiroya Iwashiro^1,2, Ken Hayakawa¹ (1.GWJ, 2.Okayama Pref. Univ.)

Keywords:

dangling bond,vacancy,RTP

The modification of residual vacancies in RTP wafers is of yet unclear. Using ESR, we investigated the Si dangling bond density in the RTP wafers with a high concentration vacancy.