[17p-B2-1~9] 15.7 Crystal characterization, impurities and crystal defects

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-B2-5] Theoretical Study on Sturucture of BMD Nuclei (VO_X) in RTP Wafers

〇Hiroya Iwashiro^1,2, Haruo Sudo¹, Ken Hayakawa¹, Eiji Kamiyama¹, Koji Sueoka³ (1.GlobalWafers Japan Co.,Ltd., 2.Graduate school of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

Keywords:

Silicon,Vacancy-Oxygen Complex,VO4

The density of oxygen precipitates on silicon (Si) wafers is proportional to the fourth power of the atomic vacancy (V) concentration. From this, 4VO₄, which is a collection of four vacancy-oxygen complexes (VO₄) introduced by Rapid Thermal Process (RTP), is considered to be the precipitation nucleus of oxygen precipitates. No study has proposed a stable structure of 4VO₄, and no specific model is known. Therefore, I searched for the stable structure of 4VO₄ by calculating the binding energy of four VO₄s assembled using first-principles calculations. As a result, 4VO₄ with two symmetric V's was found to be the most stable structure.