Presentation Information
[17p-B2-7]Quality of silicon substrate and point defects: 2nd generation
(12) Nonuniformity of isotopes and intrinsic point defects
〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research center)
Keywords:
silicon crystal,isotope,segregation
In 2019, isotope enriched Si sphere replaced the kilogram prototype [1]. In addition to the brain and neural network in the LSI period and the heart and blood network in the power device period [2], Si became the base of science and social life. Improvement of quality and understanding of Si crystal is necessary. Carbon impurity, reducing the lattice parameter, is the largest source of error
those of 30Si and 29Si are estimated by extrapolated to be about 1.0005 and 1.0001, close to 1.
Two degrees temperature change was calculated to result in the concentration change of about 3%. We must consider the diffusion at high temperature. The diffusion coefficient near melting point is known to be 10-4-5cm-1, so that nonuniformity is considered to be homogenized
those of 30Si and 29Si are estimated by extrapolated to be about 1.0005 and 1.0001, close to 1.
Two degrees temperature change was calculated to result in the concentration change of about 3%. We must consider the diffusion at high temperature. The diffusion coefficient near melting point is known to be 10-4-5cm-1, so that nonuniformity is considered to be homogenized
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