Presentation Information
[17p-B3-10]Fabrication of Ferroelectric Thin Films Using (Hf, Zr)O2 Buffer Layers and Spin-Coating Technique
〇Risa Kataoka1, Haining Li1, Takeshi Kijima1,2, Hiroyasu Yamahara1, Hitoshi Tabata1, Munetoshi Seki1 (1.Univ. of Tokyo, 2.Gaianixx Inc.)
Keywords:
ferroelectric,ferroelectric photovoltaic effect,Si integration
In this study, we attempted to fabricate high-quality ferroelectric thin films by spin-coating method using (Hf, Zr)O2 film as a buffer layer and investigated their properties.PbZr0.52Ti0.48O3 (PZT) thin films were fabricated on SrRuO3(100)/Pt(200)/Hf0.25Zr0.75O2(110)/Si(100) substrate by spin-coating method. The PZT films were oriented in the (001) direction, confirming epitaxial growth.
A remnant polarization of 2Pr = 48.9 μC/cm2 was obtained at 25 V. Measurement of the J-V characteristics under light irradiation at a wavelength of 340 nm showed that the poling caused a difference in the short-circuit current density. The enhancement of photovoltaic properties by the application of poling suggests a photovoltaic effect due to the intrinsic spontaneous polarization of the thin film.
A remnant polarization of 2Pr = 48.9 μC/cm2 was obtained at 25 V. Measurement of the J-V characteristics under light irradiation at a wavelength of 340 nm showed that the poling caused a difference in the short-circuit current density. The enhancement of photovoltaic properties by the application of poling suggests a photovoltaic effect due to the intrinsic spontaneous polarization of the thin film.
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